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DMT8012LPS-13 - Diodes Incorporated

Description: MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A

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DMT8012LPS-13 - Diodes Incorporated  - 3D model
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DMT8012LPS-13 Details

  • Manufacturer Part Number:

    DMT8012LPS-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    10.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMT8012LPS-13 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are suggested. Refer to the Diodes Incorporated application note for more details.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to minimize noise and voltage fluctuations.
  • The DMT8012LPS-13 is rated for operation from -40°C to 125°C. However, the device's performance may degrade at extreme temperatures. Consult the datasheet for more information on temperature-related specifications.
  • The DMT8012LPS-13 is an industrial-grade device, but it may not meet the specific requirements for high-reliability or automotive applications. Consult with Diodes Incorporated or a qualified engineer to determine the device's suitability for your specific application.
  • The DMT8012LPS-13 has built-in ESD protection, but additional measures may be necessary to prevent latch-up. Follow proper PCB design and handling practices to minimize the risk of ESD damage and latch-up.

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DMT8012LPS-13 Overview

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