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Image Part Number D.S Description Package Category Prices / Stock Model Action
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DMT8012LFG-7 Diodes Incorporated
1 Diodes Inc DMT8012LFG-7 N-channel MOSFET Transistor, 35 A, 80 V, 8-Pin POWERDI3333 Other DMT8012LFG-7 1 Download Model
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DMT8012LK3 Diodes Incorporated
1 MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A Other DMT8012LK3 1 Download Model
Part Image Part Image 1 MSL1 Robust Package Design ; Max rDS(on) = 0.9 mΩ at VGS = 6 V, ID = 47 A ; Low Profile 8x8mm MLP Package ; Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery ; 100% UIL Tested ; Advanced Package and Silicon Combination for Low rDS(on)and High Efficiency ; RoHS Compliant ; Max rDS(on) = 0.56 mΩ at VGS = 10 V, ID = 64 A Other FDMT80040DC 1 Download Model
Part Image Part Image 1 Max rDS(on) = 4.14 mΩ at VGS = 10 V, ID = 20 A ; RoHS Compliant ; Low profile 8x8mm MLP packag ; Next generation enhanced body diode technology, engineered for soft recovery ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; Max rDS(on) = 6.0 mΩ at VGS = 6 V, ID = 16 A Other FDMT800120DC 1 Download Model
Part Image Part Image 1 Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 8.4 mΩ at VGS = 6 V, ID = 13 A ; Next generation enhanced body diode technology, engineered for soft recovery ; RoHS Compliant ; Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 15 A ; MSL1 robust package design ; Low profile 8x8mm MLP package ; 100% UIL tested Other FDMT800150DC 1 Download Model
Part Image Part Image 1 RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Next generation enhanced body diode technology, engineered for soft recovery ; Low profile 8x8mm MLP package ; 100% UIL tested ; Max rDS(on) = 4.46 mΩ at VGS = 6 V, ID = 19 A ; Max rDS(on) = 2.95 mΩ at VGS = 10 V, ID = 24 A ; MSL1 robust package design Other FDMT800100DC 1 Download Model
Part Image Part Image 1 Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Next generation enhanced body diode technology, engineered for soft recovery ; 100% UIL tested ; Low profile 8x8mm MLP package ; Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A ; RoHS Compliant Other FDMT80080DC 1 Download Model
Part Image Part Image 1 Next generation enhanced body diode technology, engineered for soft recovery ; MSL1 robust package design ; Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A ; RoHS Compliant ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Low profile 8x8mm MLP package ; Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Other FDMT80060DC 1 Download Model
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DMT8020LDG-7 Diodes Incorporated
1 Power Field-Effect Transistor, 6.7A I(D), 80V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8020LDG-7 0 Build or Request
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DMT8012LK3-13 Diodes Incorporated
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1 MOSFETs N-Ch Enh Mode FET 80V 20Vgss 80A DMT8012LK3-13 1 Download Model
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DMT8008LFG-7 Diodes Incorporated
1 Power Field-Effect Transistor, 48A I(D), 80V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8008LFG-7 0 Build or Request
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DMT8008SPS-13 Diodes Incorporated
1 Power Field-Effect Transistor, 83A I(D), 80V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8008SPS-13 0 Build or Request
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DMT8008LFG-13 Diodes Incorporated
1 Power Field-Effect Transistor, 48A I(D), 80V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8008LFG-13 0 Build or Request
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DMT8008LSS-13 Diodes Incorporated
1 Power Field-Effect Transistor, 13A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8008LSS-13 0 Build or Request
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DMT8008LK3-13 Diodes Incorporated
1 Power Field-Effect Transistor, 95A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 DMT8008LK3-13 0 Build or Request
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DMT8012LFG-13 Diodes Incorporated
1 Power Field-Effect Transistor, 9.5A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8012LFG-13 0 Build or Request
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DMT8008SK3-13 Diodes Incorporated
1 Power Field-Effect Transistor, 90A I(D), 80V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 DMT8008SK3-13 0 Build or Request
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DMT8012LSS-13 Diodes Incorporated
1 Power Field-Effect Transistor, 9.7A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8012LSS-13 0 Build or Request
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DMT8007LPSW-13 Diodes Incorporated
1 Power Field-Effect Transistor, 100A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8007LPSW-13 0 Build or Request
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DMT8020LDG-13 Diodes Incorporated
1 Power Field-Effect Transistor, 6.7A I(D), 80V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8020LDG-13 0 Build or Request
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DMT8003SPSW-13 Diodes Incorporated
1 Power Field-Effect Transistor, 100A I(D), 80V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8003SPSW-13 0 Build or Request
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DMT8012LPS-13 Diodes Incorporated
1 MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A DMT8012LPS-13 1 Download Model
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DMT8003SPSWQ-13 Diodes Incorporated
1 Power Field-Effect Transistor, 100A I(D), 80V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8003SPSWQ-13 0 Build or Request
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DMT8008SCT Diodes Incorporated
1 Power Field-Effect Transistor, 111A I(D), 80V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB DMT8008SCT 0 Build or Request
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DMT8030LFDF-7 Diodes Incorporated
1 Power Field-Effect Transistor, 7.5A I(D), 80V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET DMT8030LFDF-7 0 Build or Request
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