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FDMT800150DC - onsemi

Description: Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 8.4 mΩ at VGS = 6 V, ID = 13 A ; Next generation enhanced body diode technology, engineered for soft recovery ; RoHS Compliant ; Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 15 A ; MSL1 robust package design ; Low profile 8x8mm MLP package ; 100% UIL tested

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PCB Footprints
FDMT800150DC - onsemi PCB footprint - Other - Other - PQFN8 8X8, 2P CASE 483AQ ISSUE B
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3D Models
FDMT800150DC - onsemi  - 3D model - Other - PQFN8 8X8, 2P CASE 483AQ ISSUE B
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FDMT800150DC Details

  • Manufacturer Part Number:

    FDMT800150DC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AQ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1093 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    99 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    561 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    85 ns

  • Turn-on Time-Max (ton):

    79 ns

FDMT800150DC Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. Ensure a minimum of 1 oz copper thickness and a 1-inch square copper pad for heat sinking.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout. Also, consider derating the device's current rating at high temperatures.
  • The maximum allowed voltage on the gate pin is 20V, but it's recommended to keep it below 15V to ensure reliable operation and prevent damage to the device.
  • Yes, the FDMT800150DC is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Use a TVS diode or a zener diode for overvoltage protection, and consider adding a current sense resistor and a fuse or a current limiter for overcurrent protection.

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FDMT800150DC Overview

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