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DMTH43M8LK3Q-13 - Diodes Incorporated

Description: N-Channel 40 V 100A (Tc) 88W (Ta) Surface Mount TO-252-3

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DMTH43M8LK3Q-13 Details

  • Manufacturer Part Number:

    DMTH43M8LK3Q-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    87 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    17.6 A

  • Drain-source On Resistance-Max:

    0.0036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMTH43M8LK3Q-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a solid ground plane and thermal vias under the device to improve heat dissipation. A minimum of 2oz copper thickness is recommended for optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and consider derating the device's power handling capabilities.
  • The DMTH43M8LK3Q-13 has built-in ESD protection, but it's still essential to follow standard ESD handling precautions, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging.
  • Yes, the DMTH43M8LK3Q-13 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's specifications.
  • The selection of input and output capacitors depends on the specific application requirements, such as ripple current, voltage rating, and ESR. Diodes Incorporated recommends using low-ESR capacitors with a voltage rating that exceeds the maximum input voltage and a capacitance value that meets the required ripple current.

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DMTH43M8LK3Q-13 Overview

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