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DMTH45M5LPSWQ-13 - Diodes Incorporated

Description: MOSFET MOSFET BVDSS: 31V~40V PowerDI5060-8/SWP T&R 2.5K

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DMTH45M5LPSWQ-13 Details

  • Manufacturer Part Number:

    DMTH45M5LPSWQ-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    18.4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    86 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    72 W

  • Pulsed Drain Current-Max (IDM):

    344 A

  • Reference Standard:

    AEC-Q101; IATF 16949; MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMTH45M5LPSWQ-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a solid ground plane and a thermal relief pattern under the device to ensure optimal thermal performance. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The DMTH45M5LPSWQ-13 has an ESD rating of Human Body Model (HBM) ≥ 2 kV. To prevent damage, handle the device with an anti-static wrist strap or mat, and avoid touching the pins or leads.
  • Yes, the DMTH45M5LPSWQ-13 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation to minimize losses and ringing.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and handle the device by the body, not the leads.

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DMTH45M5LPSWQ-13 Overview

Use the download button to access the DMTH45M5LPSWQ-13 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like DMTH4, or try a keyword search, such as Power Field-Effect Transistors

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