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DMTH47M2LPSWQ-13 - Diodes Incorporated

Description: N-Channel 40 V 73A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)

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DMTH47M2LPSWQ-13 - Diodes Incorporated  - 3D model
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DMTH47M2LPSWQ-13 Details

  • Manufacturer Part Number:

    DMTH47M2LPSWQ-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    24.4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    73 A

  • Drain-source On Resistance-Max:

    0.0073 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14.8 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Pulsed Drain Current-Max (IDM):

    292 A

  • Reference Standard:

    AEC-Q101; IATF 16949; MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMTH47M2LPSWQ-13 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the DMTH47M2LPSWQ-13 is a QFN4040-24 package with a 4x4mm body size and 0.5mm pitch. A recommended land pattern is available in the Diodes Incorporated datasheet or through their customer support.
  • To ensure reliable operation in high-temperature environments, follow proper thermal design and layout guidelines, such as providing adequate heat dissipation paths, using thermal vias, and keeping the device away from heat sources. Additionally, consider derating the device's power handling according to the temperature derating curve provided in the datasheet.
  • The DMTH47M2LPSWQ-13 has built-in ESD protection diodes on its input pins, which can withstand up to 2kV of electrostatic discharge according to the Human Body Model (HBM). To prevent latch-up, ensure that the device is operated within its recommended operating conditions, and avoid applying voltage or current that exceeds the maximum ratings.
  • Yes, the DMTH47M2LPSWQ-13 is suitable for high-frequency switching applications due to its low RDS(on) and low gate charge. However, ensure that the device is operated within its recommended frequency range and follow proper PCB layout and design guidelines to minimize parasitic inductance and capacitance.
  • The optimal gate drive voltage for the DMTH47M2LPSWQ-13 depends on the specific application and operating conditions. As a general guideline, use a gate drive voltage between 4.5V and 10V to ensure reliable switching and minimize power losses. Consult the datasheet and application notes for more detailed guidance.

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DMTH47M2LPSWQ-13 Overview

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