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DMTH4M70SPGW-13 - Diodes Incorporated

Description: MOSFETs MOSFET BVDSS: 31V~40V PowerDI8080-5 T&R 2K

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DMTH4M70SPGW-13 - Diodes Incorporated  - 3D model
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DMTH4M70SPGW-13 Details

  • Manufacturer Part Number:

    DMTH4M70SPGW-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    924.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    460 A

  • Drain-source On Resistance-Max:

    0.0007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    116 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    428 W

  • Pulsed Drain Current-Max (IDM):

    1840 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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DMTH4M70SPGW-13 Overview

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