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DTA123ECAT116 - ROHM Semiconductor

Description: PNP, SOT-23, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor)

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DTA123ECAT116 - ROHM Semiconductor PCB footprint - Other - Other - SOT-23(SST3)-+-
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DTA123ECAT116 - ROHM Semiconductor  - 3D model - Other - SOT-23(SST3)-+-
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DTA123ECAT116 Details

  • Manufacturer Part Number:

    DTA123ECAT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MINIMOLD, SST, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    20

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

DTA123ECAT116 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the DTA123ECAT116 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.
  • To ensure proper biasing, follow the recommended voltage and current conditions specified in the datasheet. Typically, this includes connecting the VCC pin to a stable 5V power supply, and the GND pin to a solid ground. Additionally, ensure that the input signals are within the recommended voltage range to prevent damage or malfunction.
  • The maximum allowable power dissipation for the DTA123ECAT116 is typically limited by the package thermal resistance and the ambient temperature. According to the datasheet, the maximum power dissipation is 500mW. However, it's crucial to perform thermal calculations and ensure that the device is properly heat-sinked to prevent overheating.
  • The DTA123ECAT116 is a general-purpose transistor array, and its frequency response is limited. While it can be used in some high-frequency applications, it's not optimized for high-frequency operation. If you need a high-frequency transistor array, consider using a device specifically designed for high-frequency applications.
  • To protect the DTA123ECAT116 from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device, and store it in an anti-static bag or container. Additionally, ensure that your PCB design includes ESD protection components, such as TVS diodes or resistors, to prevent ESD damage.

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DTA123ECAT116 Overview

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