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DTA123JUA-TP - MCC

Description: Pre-Biased Transistors

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Symbol
DTA123JUA-TP - MCC - PCB symbol
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PCB Footprints
DTA123JUA-TP - MCC PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - DTA123JUA-TP
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3D Models
DTA123JUA-TP - MCC - 3D model - SOT23 (3-Pin) - DTA123JUA-TP
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DTA123JUA-TP Details

  • Manufacturer Part Number:

    DTA123JUA-TP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 21

  • Collector Current-Max (IC):

    0.1 A

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

DTA123JUA-TP Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the DTA123JUA-TP is a standard SOT-23 package with a 1.3mm x 1.3mm pad size and a 0.5mm x 0.5mm thermal pad.
  • While the DTA123JUA-TP has a maximum operating temperature of 150°C, it's recommended to derate the power dissipation above 125°C to ensure reliable operation. Consult the datasheet for thermal derating information.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider using a resistor network to stabilize the base voltage and prevent thermal runaway.
  • The DTA123JUA-TP has a transition frequency (fT) of 3 GHz, making it suitable for high-frequency applications up to several hundred MHz. However, for frequencies above 1 GHz, consider using a transistor with a higher fT or a specialized RF transistor.
  • While the DTA123JUA-TP has a maximum collector current (IC) of 1 A, it's essential to consider the transistor's power dissipation and thermal limitations when switching high currents. Ensure the transistor is properly heatsinked and the current is within the recommended limits to prevent overheating and damage.

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DTA123JUA-TP Overview

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