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DTC114GU3T106 - ROHM Semiconductor

Description: NPN, SOT-323, R2 Alone Type Digital Transistor (Bias Resistor Built-in Transistor)

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PCB Footprints
DTC114GU3T106 - ROHM Semiconductor PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT323
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3D Models
DTC114GU3T106 - ROHM Semiconductor  - 3D model - SOT23 (3-Pin) - SOT323
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DTC114GU3T106 Details

  • Manufacturer Part Number:

    DTC114GU3T106

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-05-28

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    9

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Terminal Finish:

    Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    30

DTC114GU3T106 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the recommended temperature range (−40°C to +150°C). Use a heat sink or thermal pad to maintain a low junction temperature. Also, follow the recommended derating curves for voltage and current.
  • The maximum allowable voltage for the gate-source (VGS) and gate-drain (VGD) pins is ±20V. Exceeding this voltage may damage the device.
  • Yes, the DTC114GU3T106 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly snubbed and that the PCB layout is optimized for high-frequency operation.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect against electrostatic discharge. Follow proper handling and storage procedures to prevent ESD damage.

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DTC114GU3T106 Overview

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