Part Image

DXT5551-13 - Diodes Incorporated

Description: Diodes Inc DXT5551-13 NPN Bipolar Transistor, 600 mA, 160 V, 3-Pin SOT-89

Download DXT5551-13 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
DXT5551-13 - Diodes Incorporated PCB footprint - Other - Other - SOT89
click to zoom
3D Models
DXT5551-13 - Diodes Incorporated  - 3D model - Other - SOT89
click to zoom

DXT5551-13 Details

  • Manufacturer Part Number:

    DXT5551-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-89, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Base Capacitance-Max:

    6 pF

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.2 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.2 V

DXT5551-13 Frequently Asked Questions (FAQs)

  • A good PCB layout for the DXT5551-13 should include a solid ground plane, wide power traces, and a thermal relief pattern under the IC to facilitate heat dissipation. A 4-layer PCB with a dedicated thermal layer is recommended.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. The EN pin should be tied to a logic high (VCC) to enable the device. A 0.1uF decoupling capacitor between VCC and GND is recommended.
  • The maximum current rating for the output pins is 20mA per pin. Exceeding this rating may cause damage to the device or affect its reliability.
  • Check the power supply voltage, ensure the EN pin is properly biased, and verify the input signals meet the specified voltage levels. Also, check for any short circuits or incorrect connections on the PCB.
  • Yes, the DXT5551-13 is a sensitive device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap, mat, or workstation, and ensure all equipment is properly grounded.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DXT5551-13 Overview

Use the download button to access the DXT5551-13 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DXT55, or try a keyword search, such as Power Bipolar Transistors

Parts related to DXT5551-13

Showing 0 results