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E3M0060065D - Wolfspeed

Description: 650 V, 60 mΩ, TO-247-3 package, Automotive qualified, Discrete SiC MOSFET

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E3M0060065D - Wolfspeed PCB footprint - Other - Other - E3M0060065D-1
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E3M0060065D - Wolfspeed  - 3D model - Other - E3M0060065D-1
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E3M0060065D Details

  • Manufacturer Part Number:

    E3M0060065D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    131 W

  • Pulsed Drain Current-Max (IDM):

    99 A

  • Reference Standard:

    AEC-Q101; IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

E3M0060065D Frequently Asked Questions (FAQs)

  • Wolfspeed recommends a 2-layer PCB with a thermal via array under the device to dissipate heat. A minimum of 10 thermal vias with a diameter of 0.3 mm, spaced 1.2 mm apart, is recommended. Additionally, a thermal pad with a minimum size of 10 mm x 10 mm is suggested.
  • To ensure reliable operation, maintain a junction temperature (Tj) below 150°C. Monitor the device's temperature using the built-in thermistor (RθJA = 2.5°C/W). Implement a thermal management strategy, such as a heat sink or fan, to keep the device within the recommended operating temperature range.
  • The maximum allowable voltage stress during switching transitions is 650 V. Exceeding this voltage may lead to device failure. Ensure that the device is operated within the recommended voltage range to prevent damage.
  • To minimize EMI, use a shielded enclosure, and ensure proper PCB layout and grounding. Implement EMI filters, such as common-mode chokes and capacitors, to reduce emissions. Follow regulatory standards, such as CISPR 25 and FCC Part 15, to ensure compliance.
  • The recommended gate drive voltage is 15 V, with a current capability of 2 A. Ensure that the gate driver can provide a fast rise and fall time (tr/tf < 10 ns) to minimize switching losses and optimize device performance.

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E3M0060065D Overview

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