SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
450 A
Drain-source On Resistance-Max:
0.0037 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
90 pF
JESD-30 Code:
R-PUFM-X11
Number of Elements:
2
Number of Terminals:
11
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
900 A
Reference Standard:
IEC-60747-8-4
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
EAB450M12XM3 Frequently Asked Questions (FAQs)
Wolfspeed provides a reference design guide for PCB layout and thermal management, which includes recommendations for copper thickness, thermal vias, and heat sink design. It's essential to follow these guidelines to ensure optimal performance and reliability.
Wolfspeed recommends using a gate driver with a high current capability (>10A) and a fast rise/fall time (<10ns) to ensure proper switching of the SiC MOSFETs. Additionally, the gate driver should be able to handle the module's gate-source voltage rating of ±20V.
The maximum allowed junction temperature for the EAB450M12XM3 is 150°C. Exceeding this temperature can lead to reduced performance, reliability, and lifespan of the module.
Wolfspeed recommends using a heat sink with a thermal resistance of <0.5°C/W and a thermal interface material (TIM) with a thermal conductivity of >5W/m-K. Additionally, ensuring good airflow and using a fan can help to dissipate heat effectively.
The recommended operating conditions for the EAB450M12XM3 include an ambient temperature range of -40°C to 85°C, a DC bus voltage of 450V, and a maximum current of 1200A. Operating outside these conditions can affect the module's performance and reliability.
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EAB450M12XM3 Overview
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