Part Image

ECH8659-TL-W - onsemi

Description: Obsolete - N-Channel Power MOSFET, 30V, 7A, 23.5mΩ, Dual ECH8

Download ECH8659-TL-W Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
ECH8659-TL-W - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-28FL/ECH8 CASE 318BF ISSUE O
click to zoom
3D Models
ECH8659-TL-W - onsemi  - 3D model - SO Transistor Flat Lead - SOT-28FL/ECH8 CASE 318BF ISSUE O
click to zoom

ECH8659-TL-W Details

  • Manufacturer Part Number:

    ECH8659-TL-W

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-28FL / ECH8

  • Package Description:

    SOT-28FL, 8 PIN

  • Manufacturer Package Code:

    318BF

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTED

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-F8

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ECH8659-TL-W Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowable voltage on the input pins is 5.5V, exceeding which may cause damage to the device.
  • Yes, the ECH8659-TL-W can be used in switching regulator applications, but ensure that the device is properly bypassed and decoupled to minimize noise and voltage spikes.
  • Check the input voltage, output load, and feedback resistors. Verify that the device is properly decoupled and bypassed. Use an oscilloscope to check for noise and voltage spikes.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

ECH8659-TL-W Overview

Use the download button to access the ECH8659-TL-W schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like ECH86, or try a keyword search, such as Power Field-Effect Transistors

Parts related to ECH8659-TL-W

Showing 0 results

ECH8659-TL-W Alternates

Showing results

Image Part Number Model
Part Image ECH8659-TL-H SANYO Semiconductor Co Ltd

Power Field-Effect Transistor

Part Image ECH8659 SANYO Semiconductor Co Ltd

Power Field-Effect Transistor, 7A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image ECH8659-TL-H onsemi

Power Field-Effect Transistor