Part Image

ECH8660-TL-H - onsemi

Description: High speed switching; 4.0V drive; The ECH8660 incorporates an Nch and Pch; Low ON-resistance; Realizes high-density mounting

Download ECH8660-TL-H Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
ECH8660-TL-H - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - ECH8
click to zoom
3D Models
ECH8660-TL-H - onsemi  - 3D model - SO Transistor Flat Lead - ECH8
click to zoom

ECH8660-TL-H Details

  • Manufacturer Part Number:

    ECH8660-TL-H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-28FL / ECH8

  • Pin Count:

    8

  • Manufacturer Package Code:

    318BF

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ECH8660-TL-H Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation. A thermal pad on the bottom of the device should be connected to a thermal plane on the PCB.
  • Follow onsemi's recommended PCB layout and design guidelines for EMC compliance. Ensure proper shielding, filtering, and grounding to minimize electromagnetic interference (EMI).
  • A high-quality, low-ESR input capacitor (e.g., X5R or X7R ceramic) with a minimum capacitance of 10uF is recommended. The input capacitor affects output voltage ripple, transient response, and overall system stability.
  • The output voltage setting depends on the specific application requirements. A higher output voltage may improve efficiency but increases the risk of overvoltage. A lower output voltage may reduce efficiency but provides better overvoltage protection. Consult the datasheet and onsemi's application notes for guidance.
  • The ECH8660-TL-H features thermal shutdown (TSD) and overcurrent protection (OCP) mechanisms to prevent damage from excessive temperatures and currents. TSD activates when the junction temperature exceeds 150°C, and OCP activates when the output current exceeds 3.5A. These mechanisms help ensure system reliability and prevent damage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

ECH8660-TL-H Overview

Use the download button to access the ECH8660-TL-H schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like ECH86, or try a keyword search, such as Power Field-Effect Transistors

Parts related to ECH8660-TL-H

Showing 0 results