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EFC2K102ANUZTDG - onsemi

Description: Small size and narrow width; Low Gate Charge; 2kV ESD HBM; Common-Drain Type; ESD Diode-Protected Gate; RoHS compliance; Low Rss(on)

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EFC2K102ANUZTDG Details

  • Manufacturer Part Number:

    EFC2K102ANUZTDG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WLCSP10 2.98x1.49x0.1

  • Package Description:

    WLCSP-10

  • Manufacturer Package Code:

    567ZG

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    38 Weeks

  • Manufacturer:

    onsemi

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.00285 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PBCC-N10

  • Number of Elements:

    2

  • Number of Terminals:

    10

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    135 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

EFC2K102ANUZTDG Frequently Asked Questions (FAQs)

  • A good PCB layout for the EFC2K102ANUZTDG should consider the following: keep the input and output capacitors close to the pins, use a solid ground plane, and minimize the length of the traces between the capacitor and the pins. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure the device operates within the specified temperature range, provide adequate heat sinking, use a thermal interface material (TIM) between the device and the heat sink, and avoid exposing the device to extreme temperatures during storage or handling.
  • The recommended input capacitor value is 10uF to 22uF, and the type should be a low-ESR ceramic capacitor, such as X5R or X7R, to minimize the equivalent series resistance (ESR) and ensure stable operation.
  • To ensure proper operation, follow a controlled power-up sequence: apply the input voltage, then the enable signal. During power-down, remove the enable signal before removing the input voltage. This helps prevent unwanted voltage transients and ensures a clean shutdown.
  • To minimize EMI and RFI, use a shielded enclosure, keep the device and its associated components away from antennas and other EMI-sensitive components, and use EMI filters or ferrite beads on the input and output lines.

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EFC2K102ANUZTDG Overview

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Part Image EFC2K102NUZTDG onsemi

Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET