FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
Application:
EFFICIENCY
Case Connection:
ISOLATED
Configuration:
SINGLE
Diode Element Material:
SILICON
Diode Type:
RECTIFIER DIODE
Forward Voltage-Max (VF):
1.25 V
JEDEC-95 Code:
DO-201AD
JESD-30 Code:
O-PALF-W2
JESD-609 Code:
e3
Non-rep Pk Forward Current-Max:
150 A
Number of Elements:
1
Number of Phases:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-65 °C
Output Current-Max:
5 A
Package Body Material:
PLASTIC/EPOXY
Package Shape:
ROUND
Package Style:
LONG FORM
Rep Pk Reverse Voltage-Max:
400 V
Reverse Current-Max:
5 µA
Reverse Recovery Time-Max:
0.05 µs
Surface Mount:
NO
Terminal Finish:
MATTE TIN
Terminal Form:
WIRE
Terminal Position:
AXIAL
EGP51G-E3/C Frequently Asked Questions (FAQs)
The recommended storage condition for EGP51G-E3/C is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
While EGP51G-E3/C is suitable for high-frequency applications, its performance may degrade above 1 GHz. It's recommended to consult with a Vishay application engineer for specific guidance.
For surface-mount assembly, handle EGP51G-E3/C by the edges to prevent damage. Use a vacuum pickup or tweezers to avoid applying pressure on the component. Ensure the PCB is clean and dry before assembly.
The maximum allowable voltage derating for EGP51G-E3/C is 80% of the rated voltage. Exceeding this may reduce the component's lifespan or cause premature failure.
EGP51G-E3/C is rated for operation up to 150°C. However, for high-temperature applications above 125°C, consult with a Vishay application engineer to ensure the component's performance and reliability.
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EGP51G-E3/C Overview
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