ENGNTBT050N65GN1TXG - onsemi
Description: Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg); No Reverse-Recovery Charge; Capable of Reverse Conduction
Description: Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg); No Reverse-Recovery Charge; Capable of Reverse Conduction
ENGNTBT050N65GN1TXG
onsemi