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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	ENGNTBT050N65GN1TXG onsemi This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg); No Reverse-Recovery Charge; Capable of Reverse Conduction	Other	ENGNTBT050N65GN1TXG	3D model not available Symbol and footprint available 2	1 Download Model
	ENGNTBT035N65GN1TXG onsemi	1	N-Channel 650 V 64A (Tc) 462W (Tc) Surface Mount TOLT -55°C ~ 150°C 488 pF @ 400 V	Other	ENGNTBT035N65GN1TXG	3D model not available Symbol and footprint available 2	1 Download Model
	ENGNTLEF3D6N20GN1TXG onsemi This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	Optimized for High Frequency Operations (> 500 kHz); No Reverse Recovery Charge; Small RDSon; Ultra Low Gate Charge and Output Charge (Qg, Qgd, Qoss); Capable of Reverse Conduction; Thermally Enhanced Dual Cooling Package	Other	ENGNTLEF3D6N20GN1TXG	3D model available Symbol and footprint available 3	1 Download Model
	ENGNTBT023N65GN1TXG onsemi This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	Optimized for High Switching Frequency (500 kHz to 2 MHz); Low Gate Charge and Output Charge (Qoss, Qg); No Reverse-Recovery Charge; Capable of Reverse Conduction	Other	ENGNTBT023N65GN1TXG	3D model not available Symbol and footprint available 2	1 Download Model

	ENGNTLEF0D7N04GN1TXG onsemi This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 40V, 0.5 mOhm		ENGNTLEF0D7N04GN1TXG	3D model available Symbol and footprint not available 1	1 Download Model
	ENGNTLEF1D0N10GN1TXG onsemi This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	Optimized for High Frequency Operations (>500 kHz up to 5 MHz); No Reverse Recovery Charge; Ultra Low Gate Charge and Output Charge (Qg, Qgd, Qoss); Capable of Reverse Conduction; Thermally Enhanced Dual Cooling Package		ENGNTLEF1D0N10GN1TXG	3D model available Symbol and footprint not available 1	1 Download Model
	ENGNTLEF1D5N10GN1TXG onsemi	1	Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 100V, 1.1 mOhm		ENGNTLEF1D5N10GN1TXG	3D model available Symbol and footprint not available 1	1 Download Model

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