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EPC2019 - Efficient Power Conversion

Description: GANFET N-CH 200V 8.5A DIE

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PCB Footprints
EPC2019 - Efficient Power Conversion PCB footprint - Other - Other - EPC2019-1
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EPC2019 - Efficient Power Conversion  - 3D model - Other - EPC2019-1
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EPC2019 Details

  • Manufacturer Part Number:

    EPC2019

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • Package Description:

    DIE-7

  • ECCN Code:

    EAR99

  • Manufacturer:

    Efficient Power Conversion

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    8.5 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XXUC-X7

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    UNCASED CHIP

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    YES

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UNSPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

EPC2019 Frequently Asked Questions (FAQs)

  • The EPC2019 can operate from -55°C to 150°C, making it suitable for high-reliability applications.
  • The EPC2019 requires a bias voltage of 5V ± 10% and a bias current of 1mA to 10mA for optimal performance. Ensure the bias voltage is stable and noise-free for best results.
  • Use a 4-layer PCB with a solid ground plane and a thermal via under the device to dissipate heat. Keep the thermal path short and use a thermal interface material (TIM) for optimal heat transfer.
  • Handle the EPC2019 with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protective bag or container for storage and transportation.
  • Use a low-impedance driver with a rise time of < 1ns and a fall time of < 2ns to ensure proper switching. A driver with a high current capability (> 1A) is recommended for optimal performance.

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EPC2019 Overview

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