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ESD7321MUT5G - onsemi

Description: Low Capacitance (0.5 pF Max, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4); Low ESD Clamping Voltage; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
ESD7321MUT5G - onsemi PCB footprint - Other - Other - X3DFN2
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ESD7321MUT5G - onsemi  - 3D model - Other - X3DFN2
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ESD7321MUT5G Details

  • Manufacturer Part Number:

    ESD7321MUT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X3DFN-2

  • Package Description:

    X3DFN2, 2 PIN

  • Manufacturer Package Code:

    152AF

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    LOW CAPACITANCE

  • Breakdown Voltage-Min:

    8 V

  • Clamping Voltage-Max:

    18 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    7 V

  • Reverse Current-Max:

    0.2 µA

  • Reverse Test Voltage:

    7 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

ESD7321MUT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal ESD protection involves placing the ESD7321MUT5G close to the connector or interface it is protecting, using short traces, and minimizing the distance between the device and the protected circuit. Additionally, a solid ground plane and a low-impedance path to ground can help to reduce the risk of ESD damage.
  • To choose the correct ESD protection device, consider the following factors: the type and level of ESD protection required, the operating voltage and current of the circuit, the package size and type, and the environmental conditions in which the device will operate. The ESD7321MUT5G is a general-purpose ESD protection device suitable for most applications, but onsemi offers a range of devices with varying levels of protection and package options.
  • The ESD7321MUT5G is rated for operation up to 5V, but it can withstand voltage transients up to 30V for short durations. However, it is not recommended to operate the device continuously above its rated voltage, as this can reduce its lifespan and affect its ESD protection performance.
  • The ESD7321MUT5G is designed to withstand multiple ESD strikes, and its protection performance is not degraded by repeated ESD events. However, the device's internal components may degrade over time due to repeated ESD strikes, which can affect its long-term reliability.
  • Yes, the ESD7321MUT5G can be used in high-frequency applications up to several hundred MHz. However, the device's parasitic capacitance and inductance may affect the signal integrity and impedance matching in high-frequency circuits. It is recommended to evaluate the device's performance in the specific application and consider using a device with lower capacitance and inductance if necessary.

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ESD7321MUT5G Overview

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