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ESD8004MUTAG - onsemi

Description: 0.35pF max capacitance; Deep snap back SCR technology

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ESD8004MUTAG - onsemi PCB footprint - Other - Other - ESD8004MUTAG-3
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ESD8004MUTAG - onsemi  - 3D model - Other - ESD8004MUTAG-3
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ESD8004MUTAG Details

  • Manufacturer Part Number:

    ESD8004MUTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    UDFN10, 2.5x1, 0.5P

  • Package Description:

    UDFN-10

  • Pin Count:

    10

  • Manufacturer Package Code:

    517BB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Min:

    5.5 V

  • Breakdown Voltage-Nom:

    7 V

  • Case Connection:

    ANODE

  • Configuration:

    COMMON ANODE, 4 ELEMENTS, 4 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N10

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    4

  • Number of Terminals:

    10

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

ESD8004MUTAG Frequently Asked Questions (FAQs)

  • A good PCB layout for ESD8004MUTAG involves keeping the device close to the protected line, using short traces, and minimizing the distance between the device and the connector. A ground plane under the device is also recommended to reduce electromagnetic interference (EMI).
  • ESD8004MUTAG is designed to handle high peak currents during surge pulses. The device's internal clamping diodes can handle peak currents up to 30A, and the device's thermal design ensures that it can dissipate the heat generated during these events.
  • Yes, ESD8004MUTAG is suitable for high-speed data lines. The device's low capacitance (0.4pF) and low clamping voltage (6V) ensure that it does not distort or attenuate high-speed signals.
  • ESD8004MUTAG protects against ESD events by clamping the voltage to a safe level, preventing damage to the protected circuit. The device's internal diodes respond quickly to ESD events, clamping the voltage within nanoseconds.
  • Yes, ESD8004MUTAG is compatible with automotive systems. The device meets the requirements of IEC 61000-4-2 (ESD) and ISO 7637-3 (transient pulses), making it suitable for use in automotive applications.

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ESD8004MUTAG Overview

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