ESDL2012MX4T5G - onsemi

ESDL2012MX4T5G Details

• Manufacturer Part Number:

  ESDL2012MX4T5G

• Brand Name:

  onsemi

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  DFN-2

• Package Description:

  X4DFN2, 2 PIN

• Manufacturer Package Code:

  152AX

• Country Of Origin:

  Mainland China, Malaysia

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.50

• Manufacturer:

  onsemi

• YTEOL:

  7

• Additional Feature:

  EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

• Breakdown Voltage-Max:

  2.1 V

• Breakdown Voltage-Min:

  1.4 V

• Breakdown Voltage-Nom:

  1.6 V

• Clamping Voltage-Max:

  7.5 V

• Configuration:

  SINGLE, 1 CHANNEL

• Diode Element Material:

  SILICON

• Diode Type:

  TRANS VOLTAGE SUPPRESSOR DIODE

• JESD-30 Code:

  R-PBCC-N2

• JESD-609 Code:

  e2

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Peak Reflow Temperature (Cel):

  260

• Polarity:

  BIDIRECTIONAL

• Power Dissipation-Max:

  0.313 W

• Reference Standard:

  IEC-61000-4-2, 4-5

• Rep Pk Reverse Voltage-Max:

  1 V

• Reverse Current-Max:

  0.5 µA

• Reverse Test Voltage:

  1 V

• Surface Mount:

  YES

• Technology:

  AVALANCHE

• Terminal Finish:

  Tin/Silver (Sn/Ag)

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  30