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F12-25R12KT4G - Infineon

Description: IGBT Modules IGBT 1200V 25A

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F12-25R12KT4G - Infineon  - 3D model
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F12-25R12KT4G Details

  • Manufacturer Part Number:

    F12-25R12KT4G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    38

  • Similar Group:

    TR0410051066

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    25 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X38

  • Number of Elements:

    12

  • Number of Terminals:

    38

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    470 ns

  • Turn-on Time-Nom (ton):

    55 ns

  • VCEsat-Max:

    2.15 V

F12-25R12KT4G Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN-1161, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a high common-mode transient immunity (CMTI) to ensure reliable operation.
  • The F12-25R12KT4G has a maximum allowed overcurrent of 2.5 times the nominal current (Ic) for a duration of 10ms. To protect the module, use a fast-acting fuse or an overcurrent protection circuit that can detect and respond to overcurrent conditions within 10ms.
  • Infineon recommends using a heat sink with a thermal resistance of ≤ 0.5 K/W and a surface finish that ensures good thermal contact. The heat sink should be designed to provide adequate airflow and should be mounted using a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/mK.
  • Infineon recommends soldering the module using a reflow soldering process with a peak temperature of 260°C and a dwell time of 30-60 seconds. The module should be handled with care to avoid mechanical stress and damage to the internal components.

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F12-25R12KT4G Overview

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About Infineon

Infineon Technologies develops semiconductor products for power conversion, control, sensing, connectivity, and security. Its portfolio includes power transistors, gate drivers, microcontrollers, sensors, communication devices, and supporting software. Power semiconductor technologies span silicon, silicon carbide, and gallium nitride, providing options for different switching, voltage, and efficiency requirements.

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