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FCB199N65S3 - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 30 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF); Optimized Capacitance; Internal Gate resistance: 7.0 ohm; Typ. RDS(on) = 170 mΩ; 100% Avalanche Tested; RoHS Compliant; Wave soldering guarantee

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PCB Footprints
FCB199N65S3 - onsemi PCB footprint - Other - Other - FCB199N65S3-1
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FCB199N65S3 - onsemi  - 3D model - Other - FCB199N65S3-1
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FCB199N65S3 Details

  • Manufacturer Part Number:

    FCB199N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2017-04-21

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    76 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.199 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCB199N65S3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCB199N65S3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the FCB199N65S3 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • To protect the FCB199N65S3 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the power connections. Keep the gate drive signal traces away from the power traces, and use a ground plane to reduce electromagnetic interference (EMI).

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FCB199N65S3 Overview

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