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FCB20N60 - onsemi

Description: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK

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FCB20N60 - onsemi  - 3D model
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FCB20N60 Details

  • Manufacturer Part Number:

    FCB20N60

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, D2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    690 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCB20N60 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the FCB20N60 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the FCB20N60, this would typically be limited by the maximum junction temperature (Tj) of 175°C, the maximum drain-source voltage (Vds) of 600V, and the maximum drain current (Id) of 20A.
  • To ensure proper cooling of the FCB20N60, it is essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device's exposed thermal pad, and then attaching a heat sink with a sufficient thermal conductivity. The heat sink should be designed to dissipate the maximum expected power loss of the device, taking into account the device's thermal resistance (Rthja) and the maximum ambient temperature.
  • The recommended gate drive voltage for the FCB20N60 is typically between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V. A higher gate drive voltage can help to reduce the device's on-state resistance (Rds(on)) and improve its switching performance, but it also increases the risk of gate oxide damage and should be used with caution.
  • To protect the FCB20N60 from electrostatic discharge (ESD), it is essential to handle the device with care and follow proper ESD precautions during assembly and testing. This includes using ESD-safe materials, grounding personnel and equipment, and avoiding direct contact with the device's pins. Additionally, the device should be stored in an ESD-safe package and protected with ESD-protection devices, such as TVS diodes or ESD-protection arrays, in the final application.
  • The recommended PCB layout for the FCB20N60 involves minimizing the parasitic inductance and capacitance of the device's pins, as well as providing a good thermal path for heat dissipation. This can be achieved by using a compact layout with short, wide traces, and placing the device close to the heat sink or other cooling mechanism. Additionally, the PCB should be designed to minimize electromagnetic interference (EMI) and ensure good signal integrity.

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FCB20N60 Overview

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Image Part Number Model
Part Image FCB20N60FTM onsemi

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FCB20N60TM onsemi

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

Part Image FCB20N60TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

Part Image STB23NM60ND STMicroelectronics

Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image APT20N60SC3G Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FCB20N60, check out Findchips.com