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FCD260N65S3 - onsemi

Description: Optimized Capacitance; Internal Gate resistance: 8.7ohm; 700 V @ TJ = 150 °C; Typ. RDS(on) = 222 mΩ; Ultra Low Gate Charge (Typ. Qg= 24 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF); 100% Avalanche Tested; RoHS Compliant RoHS Compliant; Wave soldering guarantee

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PCB Footprints
FCD260N65S3 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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3D Models
FCD260N65S3 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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FCD260N65S3 Details

  • Manufacturer Part Number:

    FCD260N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.7

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCD260N65S3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCD260N65S3 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the FCD260N65S3 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the FCD260N65S3 can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • A good PCB layout for the FCD260N65S3 should minimize parasitic inductance and capacitance. Use a solid ground plane, keep the drain and source connections short and wide, and ensure good thermal conduction to the heat sink.

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FCD260N65S3 Overview

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