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FCD3400N80Z - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 7.4 nC); Low Eoss (Typ. 0.9 uJ @ 400V); ESD Improved Capability; RDS(on) = 2.75 Ω (Typ.); 100% Avalanche Tested; RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)

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FCD3400N80Z - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_4
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FCD3400N80Z - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_4
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FCD3400N80Z Details

  • Manufacturer Part Number:

    FCD3400N80Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    12.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    3.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    93 ns

  • Turn-on Time-Max (ton):

    53 ns

FCD3400N80Z Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FCD3400N80Z is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good thermal contact between the device and the heat sink, and consider using a thermal interface material if necessary.
  • The recommended gate drive voltage for the FCD3400N80Z is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency.
  • Yes, the FCD3400N80Z can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent shoot-through currents.
  • The recommended dead time for the FCD3400N80Z is typically in the range of 100ns to 500ns, depending on the specific application and switching frequency. However, the exact dead time may vary depending on the system requirements and noise immunity.

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