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FCD360N65S3R0 - onsemi

Description: MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

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FCD360N65S3R0 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_11
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FCD360N65S3R0 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_11
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FCD360N65S3R0 Details

  • Manufacturer Part Number:

    FCD360N65S3R0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.7

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCD360N65S3R0 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FCD360N65S3R0 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good thermal contact between the device and the heat sink, and provide adequate airflow to dissipate heat.
  • The recommended gate drive voltage for the FCD360N65S3R0 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the FCD360N65S3R0 can be used in a parallel configuration, but it's crucial to ensure that the devices are matched and have identical thermal and electrical characteristics to prevent uneven current sharing and potential damage.
  • A good PCB layout for the FCD360N65S3R0 should minimize parasitic inductance and capacitance. Use a star-point connection for the gate, source, and drain, and ensure a low-impedance path for the drain-source current.

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FCD360N65S3R0 Overview

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