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FCH023N65S3-F155 - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 222 nC); 100% Avalanche Tested; Low Effective Output Capacitance (Typ. Coss(eff.) = 1980 pF); Typ. RDS(on) = 19.5 mΩ; RoHS Compliant

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FCH023N65S3-F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CE ISSUE O-
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FCH023N65S3-F155 - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CE ISSUE O-
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FCH023N65S3-F155 Details

  • Manufacturer Part Number:

    FCH023N65S3-F155

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 3L

  • Manufacturer Package Code:

    340CH

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    2025 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH023N65S3-F155 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for FCH023N65S3-F155 is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The recommended gate resistor value for FCH023N65S3-F155 is typically in the range of 10Ω to 100Ω, depending on the specific application and gate drive circuit.
  • Yes, FCH023N65S3-F155 is suitable for high-frequency switching applications up to several hundred kHz, but ensure the gate drive circuit is designed to minimize ringing and oscillations.
  • Use a suitable voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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FCH023N65S3-F155 Overview

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