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FCH041N60E - onsemi

Description: 100% Avalanche Tested; Low Effective Output Capacitance (Typ. Coss.eff = 735pF); RoHS Compliant; Max. RDS(on) = 41mΩ; Ultra Low Gate Charge (Typ. Qg = 285nC)

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FCH041N60E - onsemi PCB footprint - Other - Other - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A-202541
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FCH041N60E - onsemi  - 3D model - Other - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A-202541
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FCH041N60E Details

  • Manufacturer Part Number:

    FCH041N60E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.22

  • Avalanche Energy Rating (Eas):

    2025 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    77 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    592 W

  • Pulsed Drain Current-Max (IDM):

    231 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH041N60E Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FCH041N60E is -55°C to 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • The recommended gate drive voltage for the FCH041N60E is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the FCH041N60E from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The recommended PCB layout for the FCH041N60E includes a solid ground plane, a separate power plane for the drain, and a Kelvin connection for the source. Additionally, the gate and source pins should be routed close together to minimize inductance.

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FCH041N60E Overview

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