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FCH041N60F - onsemi

Description: Low effective output capacitance; 100% avalanche tested; Ultra low gate charge (Typ. Qg=277nC); RDS(on)= 36mΩ (Typ)

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FCH041N60F - onsemi - PCB symbol
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PCB Footprints
FCH041N60F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD_1
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3D Models
FCH041N60F - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD_1
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FCH041N60F Details

  • Manufacturer Part Number:

    FCH041N60F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Package Description:

    PACKAGE-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    2025 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    76 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Pulsed Drain Current-Max (IDM):

    228 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH041N60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCH041N60F is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, make sure to attach a heat sink to the device, and apply a thermal interface material (TIM) to fill any gaps between the device and heat sink. Also, ensure good airflow around the heat sink.
  • The recommended gate drive voltage for the FCH041N60F is between 10V and 15V. This ensures reliable switching and minimizes the risk of damage to the device.
  • Yes, the FCH041N60F is suitable for high-frequency switching applications up to 100 kHz. However, be aware that high-frequency operation can increase switching losses and reduce the device's overall efficiency.
  • To protect the FCH041N60F from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Also, consider adding overcurrent protection using a fuse or a current-sensing resistor.

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FCH041N60F Overview

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