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FCH041N65EFL4 - onsemi

Description: RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF); 100% Avalanche Tested; Typ. RDS(on) = 36 mΩ; 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 229 nC)

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FCH041N65EFL4 - onsemi PCB footprint - Other - Other - FCH041N65EFL4-3
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FCH041N65EFL4 - onsemi  - 3D model - Other - FCH041N65EFL4-3
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FCH041N65EFL4 Details

  • Manufacturer Part Number:

    FCH041N65EFL4

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    2025 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    76 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Pulsed Drain Current-Max (IDM):

    228 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    394 ns

  • Turn-on Time-Max (ton):

    180 ns

FCH041N65EFL4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FCH041N65EFL4 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow to dissipate heat.
  • The recommended gate drive voltage for the FCH041N65EFL4 is between 10V and 15V. This ensures reliable switching and minimizes the risk of damage to the device.
  • Yes, the FCH041N65EFL4 can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of threshold voltage and on-resistance to prevent uneven current sharing. Additionally, a common gate drive and careful PCB layout are crucial to prevent oscillations and ensure reliable operation.
  • The maximum allowed dv/dt for the FCH041N65EFL4 is 10V/ns. Exceeding this limit can cause the device to malfunction or fail.

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FCH041N65EFL4 Overview

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