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FCH041N65F_F155 - onsemi

Description: FCH041N65F_F155 N-Channel MOSFET, 76 A, 650 V SuperFET II, 3-Pin TO-247 ON Semiconductor

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FCH041N65F_F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CH ISSUE A_2025
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FCH041N65F_F155 - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CH ISSUE A_2025
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FCH041N65F_F155 Details

  • Manufacturer Part Number:

    FCH041N65F_F155

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    FLANGE MOUNT, R-PSFM-T3

  • Manufacturer Package Code:

    TO247G03

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2025 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    76 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Pulsed Drain Current-Max (IDM):

    228 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH041N65F_F155 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, derating the device's power dissipation and voltage ratings according to the temperature derating curves in the datasheet is crucial.
  • The FCH041N65F-F155 has an integrated ESD protection diode, but it's still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) ESD rating of 2kV and a machine model (MM) ESD rating of 200V are recommended.
  • Yes, the FCH041N65F-F155 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the PCB layout is designed to minimize current imbalance and thermal mismatch between the devices.
  • The recommended gate drive circuits for the FCH041N65F-F155 involve using a dedicated gate driver IC or a discrete circuit with a suitable voltage source, resistor, and capacitor. The gate drive circuit should be designed to provide a fast rise and fall time, and to minimize ringing and oscillations.

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