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FCH043N60 - onsemi

Description: Obsolete - N-Channel SuperFET II FRFET MOSFET 600V, 52A, 62mΩ

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FCH043N60 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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3D Models
FCH043N60 - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FCH043N60
  • Part Number FCH043N60
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
  • Released Date Oct 5, 2018
  • Last Modified Date Sep 19, 2024 2:45 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FCH043N60 Details

  • Manufacturer Part Number:

    FCH043N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Package Description:

    PACKAGE-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2025 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    592 W

  • Pulsed Drain Current-Max (IDM):

    225 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH043N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCH043N60 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the FCH043N60 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • Yes, the FCH043N60 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the FCH043N60 from overvoltage. For overcurrent protection, use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.

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