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FCH077N65F-F085 - onsemi

Description: Typical RDS(on) = 68 mΩ at VGS = 10 V, ID = 27 A ; UIS Capability ; RoHS Compliant ; Qualified to AEC Q101 ; Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A

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FCH077N65F-F085 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD
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FCH077N65F-F085 - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD
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FCH077N65F-F085 Details

  • Manufacturer Part Number:

    FCH077N65F-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-247 3L

  • Manufacturer Package Code:

    340CK

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1128 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    54 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    194 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    481 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    237 ns

  • Turn-on Time-Max (ton):

    148 ns

FCH077N65F-F085 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCH077N65F-F085 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the heat sink and avoid blocking airflow to the heat sink.
  • The recommended gate drive voltage for the FCH077N65F-F085 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • Yes, the FCH077N65F-F085 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and that the devices are matched for optimal performance.
  • The maximum allowed dv/dt for the FCH077N65F-F085 is 10V/ns. Exceeding this limit can cause the device to malfunction or fail.

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FCH077N65F-F085 Overview

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