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FCH104N60F - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 107 nC); 100% AvalancheTested; RDS(on) = 104 mΩ (Max); Low Effective Output Capacitance; RoHS Compliant

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FCH104N60F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247, MOLDED, 3-LEAD, JEDEC VARIATION AB
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FCH104N60F - onsemi  - 3D model - Transistor Outline, Vertical - TO-247, MOLDED, 3-LEAD, JEDEC VARIATION AB
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FCH104N60F Details

  • Manufacturer Part Number:

    FCH104N60F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Package Description:

    TO-247, 3 PIN

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    809 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.104 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Pulsed Drain Current-Max (IDM):

    111 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH104N60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FCH104N60F can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, such as thermal grease or thermal tape, and ensure the heat sink is properly mounted and secured.
  • The recommended gate resistor value for the FCH104N60F depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or contact onsemi support for specific guidance.
  • Yes, the FCH104N60F is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101, which is a standard for automotive-grade semiconductor devices. However, it's essential to consult the datasheet and application notes to ensure the device meets the specific requirements of your application.
  • To protect the FCH104N60F from ESD, it's essential to follow proper handling and storage procedures. Use an anti-static wrist strap or mat, and store the devices in anti-static packaging. Additionally, ensure that the device is properly grounded during handling and assembly.

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