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FCH35N60 - onsemi

Description: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247

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FCH35N60 - onsemi - PCB symbol
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PCB Footprints
FCH35N60 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A_2024
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3D Models
FCH35N60 - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A_2024
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FCH35N60
  • Part Number FCH35N60
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A_2024
  • Released Date Dec 23, 2024
  • Last Modified Date Dec 23, 2024 6:45 AM UTC
  • Pinout / Pin List Click Here (Member Only)

FCH35N60 Details

  • Manufacturer Part Number:

    FCH35N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Package Description:

    LEAD FREE PACKAGE-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1455 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.098 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    312.5 W

  • Pulsed Drain Current-Max (IDM):

    105 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH35N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the FCH35N60 is 175°C, but it's recommended to keep it below 150°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good thermal contact between the device and the heat sink. Additionally, keeping the ambient temperature below 50°C can help reduce thermal stress.
  • The recommended gate drive voltage for the FCH35N60 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can help reduce switching losses, but may also increase gate charge and oscillations.
  • To prevent shoot-through, ensure that the dead-time between the high-side and low-side switches is sufficient (typically 100-200 ns), and that the gate drive voltage is well-regulated. Additionally, consider using a dedicated gate driver IC with built-in shoot-through protection.
  • The maximum allowed dv/dt for the FCH35N60 is 50 V/ns, but it's recommended to limit it to 20 V/ns or less to minimize electromagnetic interference (EMI) and ensure reliable operation.

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FCH35N60 Overview

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