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FCMT080N65S3 - onsemi

Description: N-Channel 650 V 30A (Tc) 227W (Tc) Surface Mount Power88 -55°C ~ 150°C (TJ)

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PCB Footprints
FCMT080N65S3 - onsemi PCB footprint - Other - Other - TDFN4 8.00x8.00x1.00, 2.00P CASE 520AB ISSUE A_2025
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FCMT080N65S3 - onsemi  - 3D model - Other - TDFN4 8.00x8.00x1.00, 2.00P CASE 520AB ISSUE A_2025
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FCMT080N65S3 Details

  • Manufacturer Part Number:

    FCMT080N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN4 8.00x8.00x1.00, 2.00P

  • Package Description:

    DFN-4

  • Manufacturer Package Code:

    520AB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    38 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    260 W

  • Pulsed Drain Current-Max (IDM):

    95 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCMT080N65S3 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, derating the device's power handling capability at high temperatures is recommended.
  • The maximum allowed voltage transient on the drain-source pins is typically limited to 100ns, and the voltage should not exceed the maximum rated voltage (Vdss) by more than 10%. Exceeding this limit can cause damage to the device.
  • To protect the device from ESD, it's essential to follow proper handling and storage procedures, use ESD-safe materials, and implement ESD protection circuits in the design. The device has an internal ESD protection diode, but external protection is still recommended.
  • The recommended gate drive voltage is typically between 10V to 15V, and the current should be limited to 1A to 2A. A higher gate drive voltage can improve switching performance, but it may also increase power losses.

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FCMT080N65S3 Overview

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