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FCMT125N65S3 - onsemi

Description: Leadless Ultra-thin SMD package; Ultra Low Gate Charge (Typ. Qg = 49 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF); Optimized Capacitance; Typ. RDS(on) = 100 mΩ; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.5 Ω; Kelvin contact; 700 V @ TJ = 150 oC

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Symbol
FCMT125N65S3 - onsemi - PCB symbol
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PCB Footprints
FCMT125N65S3 - onsemi PCB footprint - Other - Other - PQFN4 8X8, 2P CASE 483AP ISSUE O
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3D Models
FCMT125N65S3 - onsemi - 3D model - Other - PQFN4 8X8, 2P CASE 483AP ISSUE O
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FCMT125N65S3 Details

  • Manufacturer Part Number:

    FCMT125N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-4

  • Package Description:

    QFN-4

  • Manufacturer Package Code:

    483AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-09-10

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    181 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCMT125N65S3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) that the FCMT125N65S3 can withstand is 150°C. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Yes, the FCMT125N65S3 is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, it's essential to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation.
  • To minimize switching losses, ensure that the gate driver is capable of providing a high current (e.g., 1A or higher) and a fast rise time (e.g., <10ns). Additionally, use a low-impedance gate drive circuit and optimize the PCB layout to minimize parasitic inductance and capacitance.
  • The recommended gate-source voltage (Vgs) for the FCMT125N65S3 is between 4.5V and 10V. Operating the device within this range ensures proper turn-on and turn-off behavior.
  • Yes, the FCMT125N65S3 can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are properly matched and that the PCB layout is optimized to minimize current imbalance and thermal mismatch.

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FCMT125N65S3 Overview

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