Part Image

FCMT250N65S3 - onsemi

Description: 700 V @ TJ = 150 oC; Optimized Capacitance; Leadless Ultra-thin SMD package; Kelvin contact; Ultra Low Gate Charge (Typ. Qg = 24 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF); Typ. RDS(on) = 210 mΩ; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.5 Ω

Download FCMT250N65S3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FCMT250N65S3 - onsemi PCB footprint - Other - Other - PQFN4 8X8, 2P CASE 483AP ISSUE O
click to zoom
3D Models
FCMT250N65S3 - onsemi  - 3D model - Other - PQFN4 8X8, 2P CASE 483AP ISSUE O
click to zoom

FCMT250N65S3 Details

  • Manufacturer Part Number:

    FCMT250N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-4

  • Manufacturer Package Code:

    483AP

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-07-24

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCMT250N65S3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FCMT250N65S3 is 150°C. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling of the FCMT250N65S3 can be achieved by using a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FCMT250N65S3 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the FCMT250N65S3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the FCMT250N65S3 is 50V/ns. Exceeding this rating can lead to device failure or malfunction.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FCMT250N65S3 Overview

Use the download button to access the FCMT250N65S3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FCMT2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FCMT250N65S3

Showing 0 results