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FCP067N65S3 - onsemi

Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 78 nC); Low Effective Output Capacitance (Typ. Coss(eff.)= 715 pF); Optimized Capacitance; Typ. RDS(on) = 59 mΩ; 100% Avalanche Tested; RoHS Compliant

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PCB Footprints
FCP067N65S3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD HEIGHT 4.7
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FCP067N65S3 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD HEIGHT 4.7
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FCP067N65S3 Details

  • Manufacturer Part Number:

    FCP067N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    214 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    312 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP067N65S3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FCP067N65S3 is -55°C to 150°C.
  • To ensure proper biasing, the FCP067N65S3 requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 650V.
  • The recommended gate resistor value for the FCP067N65S3 is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • To protect the FCP067N65S3 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding a current sense resistor and a fuse or a current limiter.
  • The maximum allowable power dissipation for the FCP067N65S3 is 150W, but this can be increased with proper heat sinking and thermal management.

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FCP067N65S3 Overview

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