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FCP125N60E - onsemi

Description: RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 75 nC); 100% Avalanche Tested; Typ. RDS(on) = 102 mΩ; 650 V @TJ= 150°C; Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF)

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FCP125N60E - onsemi - PCB symbol
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PCB Footprints
FCP125N60E - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A(ON Semi)
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3D Models
FCP125N60E - onsemi - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A(ON Semi)
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FCP125N60E Details

  • Manufacturer Part Number:

    FCP125N60E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    720 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    278 W

  • Pulsed Drain Current-Max (IDM):

    87 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    278 ns

  • Turn-on Time-Max (ton):

    106 ns

FCP125N60E Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FCP125N60E can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • The thermal resistance of the FCP125N60E can be calculated using the thermal resistance values provided in the datasheet. The junction-to-case thermal resistance (RθJC) is 1.5°C/W, and the case-to-ambient thermal resistance (RθCA) is dependent on the heat sink and cooling system used.
  • The recommended gate drive voltage for the FCP125N60E is between 10V and 15V. However, the gate drive voltage should be adjusted based on the specific application and switching frequency.
  • Yes, the FCP125N60E can be used in high-frequency switching applications up to 100 kHz. However, the switching frequency should be limited to ensure that the device does not exceed its maximum junction temperature.
  • To ensure the reliability of the FCP125N60E in a high-reliability application, it's recommended to follow the recommended operating conditions, use a suitable heat sink, and implement proper thermal management. Additionally, the device should be operated within its specified ratings and derated accordingly.

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FCP125N60E Overview

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