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FCP165N65S3 - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 39 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF); Optimized Capacitance; Internal Gate Resistance: 4.6 Ω; Typ. RDS(on) = 140 mΩ; 100% Avalanche Tested; RoHS Compliant

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FCP165N65S3 - onsemi - PCB symbol
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FCP165N65S3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FCP165N65S3
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FCP165N65S3 - onsemi - 3D model - Transistor Outline, Vertical - FCP165N65S3
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FCP165N65S3 Details

  • Manufacturer Part Number:

    FCP165N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    87 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.165 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    154 W

  • Pulsed Drain Current-Max (IDM):

    47.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP165N65S3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) that the FCP165N65S3 can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • The maximum current rating of the FCP165N65S3 is dependent on the package and the thermal management of the system. The datasheet provides a maximum current rating of 165A at a case temperature (Tc) of 25°C. However, the actual current rating will be lower at higher temperatures. You can use the thermal derating curves provided in the datasheet to calculate the maximum current rating for your specific application.
  • The recommended gate drive voltage for the FCP165N65S3 is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate oxide stress and reduce the reliability of the device.
  • To ensure the FCP165N65S3 is properly biased for optimal performance, you should provide a stable DC bias voltage to the gate and ensure that the gate-source voltage (Vgs) is within the recommended range of 0V to 15V. You should also ensure that the drain-source voltage (Vds) is within the recommended range of 0V to 650V.
  • The FCP165N65S3 has a high power density, and proper thermal management is critical to ensure reliable operation. You should ensure that the device is mounted on a heat sink with a low thermal resistance, and that the heat sink is properly cooled using air flow or a liquid cooling system. You should also ensure that the device is operated within the recommended temperature range to prevent thermal runaway.

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FCP165N65S3 Overview

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