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FCPF11N60NT - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, SUPERFET II, 800 V, 4 A, 1.3 Ω, TO-220F

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FCPF11N60NT - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FCPF11N60NT
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FCPF11N60NT - onsemi  - 3D model - Transistor Outline, Vertical - FCPF11N60NT
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FCPF11N60NT Details

  • Manufacturer Part Number:

    FCPF11N60NT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    201.7 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10.8 A

  • Drain-source On Resistance-Max:

    0.299 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32.1 W

  • Pulsed Drain Current-Max (IDM):

    32.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF11N60NT Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCPF11N60NT is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the FCPF11N60NT depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or contact onsemi support for specific guidance.
  • Yes, the FCPF11N60NT is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the FCPF11N60NT from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are ESD-protected, and use ESD-protected packaging and storage materials. Additionally, follow proper soldering and assembly techniques to prevent ESD damage during manufacturing.

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FCPF11N60NT Overview

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