Part Image

FCPF250N65S3R0L-F154 - onsemi

Description: Optimized Capacitance; 700 V @ TJ = 150 °C; Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF); Ultra Low Gate Charge (Typ. Qg = 24 nC); Typ. RDS(on) = 210 mΩ; 100% Avalanche Tested; Internal Gate resistance: 1.1 Ω; RoHS Compliant

Download FCPF250N65S3R0L-F154 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FCPF250N65S3R0L-F154 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220F*
click to zoom
3D Models
FCPF250N65S3R0L-F154 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220F*
click to zoom

FCPF250N65S3R0L-F154 Details

  • Manufacturer Part Number:

    FCPF250N65S3R0L-F154

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221BN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF250N65S3R0L-F154 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the bottom layer to improve heat dissipation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including using a heat sink, ensuring good airflow, and keeping the junction temperature (Tj) below the maximum rated value of 150°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • Exceeding the maximum rated current can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's essential to ensure that the device is operated within the recommended current ratings to maintain reliability and performance.
  • To handle ESD protection during handling and assembly, it's recommended to follow standard ESD handling procedures, including using ESD-safe workstations, wrist straps, and packaging materials. Additionally, consider using ESD protection devices, such as TVS diodes, to protect the device from electrostatic discharge.
  • The recommended gate drive circuits for optimal performance involve using a high-current, low-impedance gate driver with a suitable voltage rating. Additionally, consider using a gate resistor to control the gate voltage rise time and prevent oscillations.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FCPF250N65S3R0L-F154 Overview

Use the download button to access the FCPF250N65S3R0L-F154 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FCPF2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FCPF250N65S3R0L-F154

Showing 0 results

FCPF250N65S3R0L-F154 Alternates

Showing results

Image Part Number Model
Part Image FCPF250N65S3R0L onsemi

Power Field-Effect Transistor, 12A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB