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FCPF290N80 - onsemi

Description: Low Eoss (Typ. 5.6 uJ @ 400 V); Ultra Low Gate Charge (Typ. Qg = 58 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF); ESD Improved Capability; Typ. RDS(on) = 0.245 Ω; 100% Avalanche Tested; RoHS Compliant

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PCB Footprints
FCPF290N80 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F
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FCPF290N80 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F
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FCPF290N80 Details

  • Manufacturer Part Number:

    FCPF290N80

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    ROHS COMPLIANT, PLASTIC, TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    882 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.29 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF290N80 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCPF290N80 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the FCPF290N80 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.
  • Yes, the FCPF290N80 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching performance and power losses should be carefully evaluated to ensure reliable operation and minimize overheating.
  • To protect the FCPF290N80 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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FCPF290N80 Overview

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