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FDA032N08 - onsemi

Description: RoHS Compliant; Low Gate Charge; High Power and Current Handling Capability; Fast Switching Speed; RDS(on) = 2.5mΩ ( Typ.) @ VGS = 10V, ID = 75A; High Performance Trench Technology for Extremely Low RDS(on)

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FDA032N08 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-3pn_
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FDA032N08 - onsemi  - 3D model - Transistor Outline, Vertical - to-3pn_
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FDA032N08 Details

  • Manufacturer Part Number:

    FDA032N08

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    SC-65, TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1995 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    800 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    940 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    932 ns

  • Turn-on Time-Max (ton):

    862 ns

FDA032N08 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDA032N08 is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Consult the datasheet for specific biasing recommendations.
  • The maximum current rating for the FDA032N08 is 32A. However, this rating may vary depending on the specific application and operating conditions.
  • Use a voltage regulator or overvoltage protection circuit to prevent voltage spikes, and consider adding current-sensing resistors and overcurrent protection circuits to prevent excessive current flow.
  • Yes, the FDA032N08 is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper layout and decoupling to minimize parasitic inductance and capacitance.

Trust Checks

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Manufacturer Collaborated
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System Verified
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FDA032N08 Overview

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Part Image FDA032N08 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET