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FDA20N50F - onsemi

Description: Low Crss ( Typ. 27pF); RoHS compliant; RDS(on) = 220mΩ ( Typ.)@ VGS = 10V, ID = 11A; 100% avalanche tested; Improved dv/dt capability; Low gate charge ( Typ. 50nC)

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PCB Footprints
FDA20N50F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FDA20N50F
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FDA20N50F - onsemi  - 3D model - Transistor Outline, Vertical - FDA20N50F
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FDA20N50F Details

  • Manufacturer Part Number:

    FDA20N50F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1110 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    388 W

  • Pulsed Drain Current-Max (IDM):

    88 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDA20N50F Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDA20N50F is -55°C to 150°C.
  • To ensure proper biasing, the FDA20N50F requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 500V.
  • The recommended gate resistor value for the FDA20N50F is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the FDA20N50F is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the FDA20N50F from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
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System Verified
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Community Approved
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FDA20N50F Overview

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