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FDA24N50 - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, UniFETTM, FRFET, 500 V, 28 A, 175 mΩ, TO-3P

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Symbol
FDA24N50 - onsemi - PCB symbol
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PCB Footprints
FDA24N50 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PN_2022
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3D Models
FDA24N50 - onsemi - 3D model - Transistor Outline, Vertical - TO-3PN_2022
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FDA24N50 Details

  • Manufacturer Part Number:

    FDA24N50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1872 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDA24N50 Frequently Asked Questions (FAQs)

  • The FDA24N50 is a power MOSFET designed for high-frequency switching applications, and its maximum operating frequency is typically in the range of 100 kHz to 1 MHz, depending on the specific application and circuit design.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. This can be achieved by using a thermal interface material (TIM) and a heat sink with a low thermal resistance. Additionally, the PCB design should allow for good airflow and heat dissipation.
  • The recommended gate drive voltage for the FDA24N50 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses and improve the device's overall performance.
  • To protect the FDA24N50 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The maximum allowed drain-source voltage (Vds) for the FDA24N50 is 500V. Exceeding this voltage can lead to device damage or failure.

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FDA24N50 Overview

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